A power MOSFET is used in automotive electronics as a reliable switching device. An increase of electronics creates resistance to reduce power dissipation within. In general, on-resistance of the power MOSFET is reduced by miniaturization of unit cells. This team was task however, with reducing on-resistance by improving the drain electrode process.
ASI Consulting Group optimized the design of the MOSFET drain electrode.
The improved robustness of the electrode drain allowed for an annealing process to be eliminated. Because the annealing is eliminated, all defects from annealing were eliminated. Because there is no annealing, the substrate can be thinned further, which leads to a reduction of resistance that is due to the substrate. A total reduction of the on-resistance of 25% was achieved. Since a 25% reduction in on-resistance over the life of the product was achieved, the chip size can be reduced by 25% with the same power dissipation. The improvement provides a remarkable 25% cost reduction in unit manufacturing cost of the power MOSFET.